Data for 1-Methoxy-2-propanol acetate (108-65-6) Oct 16, 2013 · AZ 15nXT Photoresist Manufacturer AZ Electronic Material / A-Z Electronic Photoresist Material Product code 21281523159 Revision date 2013 October 16 Language English. Recommended materials include PTFE, stainless steel and high-density poly-ethylene and -propylene. Chemicals for the work process with resists (thinner, remover, adhesion promoter, stopper focus on steep resist sidewalls AZ® 1500 AZ® 1505 AZ® 1512 HS AZ® 1514 H AZ® 1518 ≈ 0. HARD BAKE Nov 23, 2013 · Recently AZ 5214E UV photoresist has been explored for e-beam lithography [25] and other types of lithography based on laser interference and near-field scanning optical microscopy, with reported Film Thickness AZ® BARLi® anti-reflective coating = 1920 Å Bake 170°C, 60 sec Film Thickness AZ® 7908 Photoresist = 0. Develop: AZ 300 MIF Developer/ Single puddle with agitation for 60 sec @ 23°C Useful information related to microfabrication processes including lithography, chemical etching, substrate cleaning, photoresists, RIE etching, metal and dielectric thin film deposition, oxide growth, ion implantation, diffusion, photomask design, and much more! Expand all / Compress all General Information The Process of Fabricating a MOSFET and photoresists. AZ 12XT-20PL-15 Photoresist Version: 2. P280 Wear protective gloves/ protective clothing/ AZ 1512 PHOTORESIST 917 MIF & IN Substance No. the AZ ® 6600 series, the AZ 701 MiR, or the image re-versal resists AZ® 5214E or TI 35ES). 975 µm Softbake Hotplate 90°C, 60 sec Exposure NIKON® 0. 2015 2 / 13 Precautionary statements : Prevention: P210 Keep away from heat/sparks/open flames/hot surfaces. AZ 1505 Photoresist Substance No. Other areas of the cleanroom may require further protective equipment. ( Negative tone photoresist with Lift-Off profile for i-line and broadband applications. 75 - 2. 130°C on (e. : GHSBBG703P Version 4. We do not claim that either of these is comprehensive. AZ 3300-F Photoresist. 1. 0 DE-GHS Revision Date 12. Beaudoin (Rev. AZ® 3300-F series positive photoresists are designed to meet the industry’s need for high performance g- and i-line crossover capabilities. 8μm) Excellent for contact holes, vias, implants, and non critical gates. 1 Revision Date 04/03/2015 Print Date 11/13/2015 7 / 13 SECTION 11. As a leading manufacturer of photoresists, Tokyo Ohka Kogyo supports the development of various industrial fields through polymer design technology, microfabrication technology Jun 3, 2024 · AZ 3330-F Photoresist; AZ 400K Developer; AZ 5214-E Photoresist; AZ 726 MIF Developer; AZ 9245 Photoresist; AZ 9260 Photoresist; AZ NLOF 2020 Photoresist; AZ NLOF 2035 Photoresist; AZ NLOF 2070 Photoresist; AZ P4620 Photoresist; CD 26 Developer; Chromium Etchant CR-7S; Citric Acid; Copper Etchant APS-100; Dichloromethane (Methylene Chlorine AZ ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. Our materials are renowned for their highly uniform coating quality on large glass substrates. Blednov, M. AZ nLOF 2070 Photoresist Overview. 0300 0. AZ‐726 developer Exposure dose (mJ/cm2) for Si Substrates* Prebake at 115 °C Layer thickness Spin speed* Resist name AZ‐1505 4000rpm 0. They exhibit excellent depth of focus, linearity, and photospeed for all crossover applications. 0450 0. 8 to 10µm. AZ 3312 Photoresist (18cps) Data Package. 2005 1/7 Section 01 - Product Information Identification of the company: AZ Electronic Materials USA Corp. the AZ® 6600 series the AZ® 701 MiR, and the AZ® 5214E) also depending on the process parameters such as the softbake conditions. 00 2. 2013 1 / 13 SECTION 1: Identification of the substance/mixture and of the company/undertaking 1. PRODUCT AND COMPANY IDENTIFICATION Product name : AZ 1512 PHOTORESIST 917 MIF & IN Product Use Description : Intermediate for electronic industry Company : EMD Performance Materials Corp. 0µm lines in 10µm thick AZ 15nXT 2400mJ/cm Exposure, AZ 300 MIF Develop * Unexposed photoresist film COMPANION PRODUCTS THINNING/EDGE BEAD REMOVAL AZ® EBR Solvent or AZ EBR 70/30 MIF DEVELOPERS AZ 300MIF REMOVERS AZ Remover 770 Cauchy A 1. This makes it possible to process thick resist films over 10 µm without N2 . As a general rule, PEB temperatures should be in the 100 to 110C range. AZ The resist are available in three viscosity grades AZ ® ECI 3007 (0. DEVELOPING. Match case Limit results 1 per page. It provides high resolution with superior aspect ratios, as well as wide focus and exposure latitude and good sidewall profiles. 2 - 2. 5 µm) and AZ ® nLOF 2070 (7. in the AZ 701 Special resist formulations are required to speed drying and prevent leveling of the wet film. 8μm Excellent for wet etch processes. : 800-515-4164 Information on the substance/preparation Product Safety: 908-429-3562 The three viscosity grades AZ ® nLOF 2020 (2. 0050 0. A post exposure bake is obligatory to carry out the cross-linking initiated during exposure. You can also browse global suppliers,vendor,prices,Price,manufacturers of AZ P4330 Photoresist(). AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are AZ 3330-F. Date/Time Dimensions User Comment; current: 09:56, 23 July 2012 (429 KB) Zwarburg (talk | contribs) {{MSDS}} Below is a list of photoresist manufacturers and a table of photoresists. Compliance Solutions The methods correspond to a specific use for each photoresist, which can be found be clicking on the photoresist name. AZ 435MIF and AZ 400K 1:3 or AZ 400K 1:4 are recommended. 0150 0. P280 Wear protective gloves/ protective clothing/ AZ nLOF 2020 Photoresist Overview. 75/0. 6063 k @ 633nm 0. The methods correspond to a specific use for each photoresist, which can AZ 3330: 5000-6000rpm/60s: 2um: 90° C/60s: 8-12s: AZ300MIF: 30-40s: 90 AZ IPS-6000 is an advanced chemically amplified positive tone photoresist optimized for use in high aspect ratio plating, MEMs, and extreme RIE etch applications. 0400 0. AZ P4620 Photoresist is a general purpose i-line/h-line/g-line sensitive material engineered for performance in most electro-plating and other metal deposition process environments. AZ 400K 1:4 provides improved developer selectivity for thinner films. 2 Relevant identified uses of the substance or mixture and uses advised against Use of the AZ 1500 Series Photoresists are general purpose, g-line/broadband sensitive materials optimized for substrate adhesion in wet etch process environments. 5 min 396 2‐3 min * Exposure time calculation: Tokyo Ohka Kogyo is a provider of chemicals such as photoresists and manufacturing equipment necessary for the manufacture of semiconductors and liquid crystal displays. These tables are rough estimates of photoresist thicknesses obtained at different spin speeds. SU-8 RECIPES This page includes the basics of SU-8 recipes and many specific recipes for SU-8. AZ 3318-D. ble resist components (residues with specific resist families), however at the expense of a slightly higher dark erosion. 0µm film thickness 0. AZ ® IPS-6090 for 30 - 150 µm Resist Film Thickness (i-line) The chemically amplified AZ ® IPS-6090 is, comparable to the AZ ® 40XT, an ultra thick resist whose high viscosity allows very large resist film thicknesses via a single coating. AZ ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. 6μm, in g-line 0. A PEB is required for proper imaging of AZ 40XT. 38%) TMAH developers. 5754 Cauchy B (µm2) 0. 65um design rules), high thermal stability materials optimized for metal RIE etch or plating process environments. In this case, the point of AZ 15nXT Series Photoresists are cross linking negative tone materials optimized for use in plating, TSV, and RIE etch applications. ZERO BIAS - scores, article reviews, protocol conditions and more AZ P4330-RS PHOTORESIST Substance No. This makes it possible to process thick resist films over 10 µm without N2 The three viscosity grades AZ ® nLOF 2020 (2. To improve its performance, AZ® 100 remover Chrome is patterned as a stop etch using AZ 3330. 01, August 10, 2018) Overview: To describe the photoresist recipe used in the AMPEL Nanofabrication Facility using the AZ 5214E-IR Photoresist and matched AZ 300 MIF developer. AZ® EBR Solvent or AZ® EBR 70/30 Developers AZ® ®400K 1:3 or 1:4, AZ 421K, AZ Developer 1:1, AZ 340 Removers AZ ® 300T, AZ 400T, AZ Kwik Strip AZ® P4000 Series Positive Tone Photoresists Grade Film Thickness Range AZ P4110 1. The AZ nLOF 2020 Photoresist is an i-line photoresist designed to simplify complex lift-off lithography processes. AZ 400K 1:3 or AZ 421K (unbuffered) are recommended for resist film thicknesses above 12µm. 60 / 0. 0µm AZ P4620 6. g. NA=0. Optimum RB-temperature now is 5° to 10°C below the temperature where crosslinking starts. Resists for the optical lithography; Protective Coating. Higher normality (less dilute) developers will improve photospeed but So, the main criteria for a certain resist is the required resist film thickness: The AZ® 1500 series (resist film thickness range 1-4 µm), the AZ ® 4533 (3-5 µm), the AZ 4562 or 9260 Reflow of AZ® 40 XT cubes at different temperatures and for different time. DEVELOPING AZ 10XT series photoresists are compatible with MIF (TMAH) or inorganic developers. The AZ® 1500 series is suitable for fi lm thicknesses from 500 nm to 3 μm, the AZ® ECI 3000 series for resist fi ®lms from 1 - 4 μm, or the AZ 4500 series for fi lm thicknesses up to several 10 μm. Product: AZ P4330-RS photoresist: Manufacturer: EMD Performance Materials Corp. Due to the high softening point of approx. This resist is very fast for maximum process throughput in positive tone and exhibits superior thermal stability and RIE etch resistance in negative tone. Gold track after patterning AZ-3330, overexposure at 40 mJ/cm 2. 00 175 200 225 250 275 300 325 350 375 400 425 450 475 500 AZ 3300 Photoresists are medium resolution (0. Composition: Handle and process as AZ P4620. This part of the resist film bleaches, so with the exposure going on, light will be The etching thickness of AZ photoresist ranges from 1 μm to 150 μm and more. 0 - >20µm* The AZ ® 4500 series follows the AZ ® 1500 series in the attainable and processable resist film thickness range. AZ 3330-F: medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. As a general rule, PEB temperatures should be in the 90 ° to 100C range. Our Removers: Application Areas and Compatibilities AZ® 100 Remover is an amine solvent mixture and standard remover for AZ® and TI photoresists. 71um 1. AZ IPS-6000 is fast, MIF developer compatible and requires no post bake re-hydration delays. DNQ-based photoresists (= almost all AZ® positive resists) become UV-transparent during exposure. com, a global distributor of electronics components. Spray or immersion developing in AZ 400K series developers is recommended. 0 – 6. 300T for complete dissolution of heavily cross linked (plasma processed) positive tone resists and difficult to remove negative tone photoresists. Merck KGaA's AZ 3330-F is a coating, photoresist liquid clear amber-red. AZ® 9200 photore- Dec 7, 2013 · AZ 3330 photoresist is next spun on the wafer and patterned to cover the core nanochannel lines as shown in Figure 2E. 65um design rules), high thermal stability material optimized for metal RIE etch process environments. AZ P4000 resists exhibit excellent adhesion to metal seed layers and compatibility with nearly all plating solutions including gold-cyanide. Removal is easy with standard photoresist strippers. 0. For positive/negative graphics. 1 Revision Date 04/03/2015 Print Date 10/29/2015 2 / 12 GHS-Labelling Symbol(s) : Signal word: Warning Hazard statements : Flammable liquid and vapour. 0µm spinnable (Product Page) AZ 4620 : improved surface adhesion for etching and plating applications, photosensitivity is broad and low, spinnable to 6 - 20 µm. Further Information. 0 - 1. AZ 3330: 5000-6000rpm/60s: 2um: 90° C/60s The solvent of most AZ®and TI photoresists is PGMEA (2-methoxy-1-methylethyl acetate, boiling point 148°C), which is also distributed as a thinner or for edge bead removal as AZ® EBR Solvent (formerly: AZ® 1500 Thinner). 0µm AZ P4400 4. Cleanroom gowns are required inside the cleanroom. 0 + g-h-i : AZ® 4999 Photoresist: AZ 4999: Photoresist for spray coating applications: NA + g-h-i : AZ® 6600 Series: AZ 6612, AZ 6615, AZ 6618-2DG, AZ 6624, AZ 6632: General propose resists for wet and dry etch application: 1. 0 + g-h-i: Datasheet Datasheet: AZ® 4999 Photoresist: AZ 4999: Photoresist for spray coating applications: NA + g-h-i: Datasheet: AZ® 6600 Series: AZ 6612, AZ 6615, AZ 6618-2DG, AZ 6624, AZ 6632: General propose resists for wet and dry etch application: 1. Az 3300-f Photoresist; of 34 /34. 0µm and works well with both organic (MIF) and inorganic developers (AZ AZ nLOF® 2020 Photoresist Substance No. 08. Great for pad layer applications Can be coated from 2. AZ 3300-F Photoresist Data Package. Jan 11, 2013 · AZ P4330-RS Photoresist Manufacturer AZ Electronic Materials Of Clariant Corp Product code GHSBBG704A Revision date 2011 January 03 Language English. Cross-section Photoresist AZ SLD 2530 AZ 1500 AZ SLD 5530 AZ GXR 601 AZ GXR 601M1 AZ P4000 AZ 12XT AZ nLOF 2000 AZ LOR-28 AZ 5200 AZ 15nXT Product Mode Platform sensitivity Ft range (µm) Max. Film thickness is set by the number of spray passes and imaging is achieved using standard exposure wavelengths and developers. AZ® 9200 Photoresist High-Resolution Thick Resist Product Data Sheet AZ® 9200 thick film photoresist is designed for the more demanding higher-resolution thick resist require-ments. Recommended for use with AZ P4000, AZ 9200, and AZ 10XT Series photoresists. Reliable performance in both dry and wet etch process environments. This blend cuts edge beads in all DNQ and chemically amplified photoresists faster and with less edge swelling than PGMEA. TOXICOLOGICAL INFORMATION Data for AZ nLOF 2020 Photoresist Further information : No toxicological testing was carried out on the preparation. 6μm, g-line 0. 1 Revision Date 04/02/2015 Print Date 12/29/2015 7 / 15 SECTION 11. 5 to 5μm. 013242 4) 0 n @ 633nm 1. AZ 3330-F. The members of the AZ® 1500 differ in the solvent concentration, the photo active compound content, and special reins for different applications in the field 4. 50 3. 8 - 5. Develop in AZ 300MIF or 917MIF developer. We would like to show you a description here but the site won’t allow us. 0µm AZ P4330-RS 3. May cause drowsiness or dizziness. 495 ID/OD sigma . Strippers AZ® 400T and 300T strippers are recommended for removal of AZ P4000 photoresist. 7 %µµµµ 1 0 obj >/Metadata 426 0 R/ViewerPreferences 427 0 R/PageLabels 428 0 R>> endobj 2 0 obj > endobj 3 0 obj >/ExtGState >/Font >/ProcSet[/PDF/Text AZ 300 MIF developer is used internally for testing of resist batches and qualification of raw materials AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are registered trademarks and AX, DX, HERB, HiR, MiR, NCD, PLP, Signiflow, AZ 3312 Photoresist (18cps) Data Package. Data for 1-Methoxy-2-propanol acetate (108-65-6) AZ 125nXT Series Photoresists are advanced, negative tone photo-polymer materials optimized for use in high aspect ratio plating, MEMs, and extreme RIE etch applications. 3 µm resist film thickness at 4000 rpm) and AZ ® 4562 (6. First the trench is patterned in Ni with AZ 3330 and etched to 5 μm. the AZ® 1500, 4500, 9200, or ECI 3000 series), or respectively, approx. A wide film thickness range. AZ ® 40XT for 15 - 100 µm Resist Film Thickness (i-line) The chemically amplified AZ ® 40 XT is an ultra thick resist whose high viscosity allows very large resist film thicknesses via a single coating. : GHSBBG70A4 Version 4. Fast in all exposure wavelengths between 350 and 450nm. 135°C, no roundening becomes visible. 00 0. 0-5. After patterning AZ® 3300 series positive photoresists are designed to meet the industry’s need for high performance g- and i-line crossover capabilities. AZ P4330-RS photoresist. Superior adhesion to Cu substrates prevents under-plating and removal is easy using AZ 400T Stripper. : 000000501935 Version 4. POST EXPOSE BAKE. SB : 90C for 60sec proximity, ASML Annular . 3. 0 µm ≈1. It does not require rehydration, requires low light doses, releases no nitrogen during exposure and develops very rapidly, thus permitting The serpentine channel represented in Fig. Streamlined lift-off process AZ® EBR 70/30 AZ EBR 70/30 is the world's most popular solvent blend for edge bead removal and general clean up. - No smoking. Film Thickness range of 2 – 10+ μm. 130°C (e. AZ P4000 Series Photoresists are general purpose i-line/h-line/g-line sensitive materials engineered for performance in most electro-plating and other metal deposition process environments. (AZ 300MIF or AZ 726MIF recommended). 0034 AZ 5214E-IR is a unique photoresist that can be processed in either positive or negative tone. Procedure 1: RIE Carbon Tetrafluoride Etch AZ 12XT-20PL Series Photoresists are advanced chemically amplified i-line resists optimized for plating, TSV, and RIE etch applications. We recommend for thinning and edge bead removal the products AZ ® EBR Solvent or PGMEA. Left: 300 nm lines and spaces with the AZ® nLOF 2020 negative resist at 2. AZ 40XT requires exposure energy at the 365nm wavelength. AZ® 400T Photoresist Stripper AZ 400T Photoresist stripper is formulated with a higher NMP concentration vs. : GHSBBG7065 Version 4. Optical Parameters - Absorptivity. 1 Product identifier Trade name : AZ 1505 Photoresist 1. 0 µm resist film thickness. 3 1 min AZ‐1518 4000rpm 1. The very high resolution potential allows lateral structural sizes down to 300 nm and opens a comparatively large and stable process window at lower resolution requirements. AZ EXP 3330 Photoresist. The AZ® 1500 photoresist series yields an improved adhesion for all common wet etching processes. Visit ChemicalBook To find more AZ P4330 Photoresist() information like chemical properties,Structure,melting point,boiling point,density,molecular formula,molecular weight, physical properties,toxicity information,customs codes. Download : Download full-size image; Fig. 5 min 12. At last,AZ P4330 Photoresist() safety, risk, hazard and MSDS, CAS A PEB is required for proper imaging of AZ 12XT. Therefore, in the beginning of the exposure, light only penetrates the upper 1-2 µm of the resist film. 05. 7 µm resist film thickness at 4000 rpm), AZ ® ECI 3012 (1. Streamlined lift-off process The resist are available in three viscosity grades AZ ® ECI 3007 (0. 5 + g-h-i AZ® 3300 Series Photoresists. AZ 10XT is sensitive to exposure energy in the 365-435nm wavelength range. 0000 0. Jan 15, 2008 · AZ 4562 Photoresist Manufacturer AZ Electronic Materials Product code SXR081518 Revision date 2008 January 15 Language English. 1A was then patterned onto the wafer using AZ 3330 photoresist and AZ 300 K developer (AZ Electronic Materials, Branchburg, NJ, USA). 00 1. AZ 300MIF is recommended. AZ 3330 ADHESION TO GLASS Here are some tips for improving AZ 3330 adhesion to a glass substrate. The nLOF 2070 Photoresist works well in both surfactant and non-surfactant containing tetramethylammonium hydroxide (TMAH) developers. 1 Revision Date 04/02/2015 Print Date 12/29/2015 1 / 14 SECTION 1. MIF developers not recommended. P233 Keep container tightly closed. AZ 3322-HS 2D. PEB : 110°for 90sec proximity. 0200 0. AZ MIR 703 Series Photoresists are medium resolution (0. Very fast resist High resolution (i-line 0. Resists for the design of complicated structures; Process Chemicals. 06. From a part of the substrates the resist will be removed, another part (those exposed to a too high temperature) will remain with the resist thermally crosslinked on it. MDI Author: Staff Created Date: 3/13/2007 2:33:12 PM AZ MIR 900 Series Photoresists are general purpose high aspect ratio i-line resists optimized for line and contact hole pattern layers. AZ® 3300-F Series: AZ 3312-F, AZ 3330-F: High speed version of AZ® 3300 series: 0. %PDF-1. 0 µm; Can be used in dry and wet etch process environments; Compatible with g-line, i-line, or broadband exposure tools AZ ® IPS-6090 Positive Thick Resist . 5 + g-h-i : AZ® 8112 AZ MiR 701 Series Photoresists are high resolution (0. : SXR100614 Version 33 Revision Date 09. Film thicknesses from 20 to 120+µm are achievable. com Page 2 of 15 1-Methoxy-2-propanol acetate Reduced Labelling (<= 125 ml) Hazard pictograms Signal word Warning 2. Thinning/ Edge Bead Removal. 50 1. AZ P4000 Series resist(s) Ellipsometrc Absorbance Normalized to 1/µm 0. ), and deep RIE etch applications. With low demands on the resolution, the PL 177 is a cost-eff ective alternative. General Information. AZ The three viscosity grades AZ ® nLOF 2020 (2. 0 DE-GHS Revision Date 17. 0500 300 350 400 450 500 550 600 650 AZ 3318D Photoresist is a medium resolution (0. TOXICOLOGICAL INFORMATION Data for AZ 3318D PHOTORESIST (30 CPS) Further information : No toxicological testing was carried out on the preparation. Resists for the electron beam lithography; Photoresist. 0350 0. 2020 Print Date: 18. Improved resolution. AZ 340, 1:5 diluted, or AZ 726 MIF for 1 minute. The fully cross linked features are extremely thermally stable and etch resistant. 26N (2. POST EXPOSE BAKE A PEB is optional for AZ 10XT. 2 µm) have a lower photoinitiator con¬centration compared to thin resists. 0 to 4. AZ P4620 exhibits excellent adhesion to metal seed layers and compatibility with nearly all plating solutions including gold-cyanide. AZ 1512 HS is a thin photoresist designed for fast and reproducible photolithography, with high contrast and high development rate as well as improved substrate adhesion. 488um 1. com) /Producer (pdfFactory 3. 50µm design rules), i-line resists optimized for line and contact hole pattern layers. 2013 Print Date 09. It is the standard resist choice for photolithography steps with no strict requirements in terms of resolution, sidewall profile or thickness. AZ AZ 1500 Series Photoresists are general purpose, g-line/broadband sensitive materials optimized for substrate adhesion in wet etch process environments. Channel Width (um) x Separation (um) Exposure Time (s) SEM Characterization; 1x1 8: 1x1 10: 1x2 10: AZ3330 can also be reflowed to make a half-cylinder shape Acid & Base Safety. The information conta ined herein is, as far as we are aw are, true and accurat e. up, i. 2015 Print Date 13. Compliance Solutions Tables of various photoresists used in the BYU Cleanroom. Ft single coat (µm) Aspect ratio AZ 1500 POS DNQ g or g-h-i 1 – 4 4 2 : 1 AZ sLD - 2530 POS DNQ g or g-h-i 2 – 4 4 2 : 1 AZ sLD - 5530 POS DNQ g or g-h-i 2 – 4. 2005 Version PRINT DATE 06. May cause respiratory irritation. MDI) /Author (Staff) /Creator (pdfFactory www. 16 \(Windows XP AZ 3312 Photoresist (18cps) High thermal stability Good process latitude in i-line, g-line, and broad band Resolution in i-line 0. Single coat film thicknesses up to 80µm are achievable on standard coating equipment. 4 to 5. Then the first sacrificial layer, which fills the trench and overlaps the edges, is patterned using SU-8 10 at a spin speed of 3000 rpm and exposure time of 30 s for a height of 6 μm in the field ( MicroChem 2002 ). Causes eye irritation. 0 – 3. Side wall angles are process tunable from strong retro-grade for lift-off, to 90 degrees vertical for RIE. Status Tables of various photoresists used in the BYU Cleanroom. AZ 3330 photoresist features (especially small features) on the glass or borofloat wafers will usually be damaged, deformed, or even nonexistent if the photoresist adhesion process is not done properly. We recommend for thinning and edge bead removal the AZ ® EBR Solvent. The AZ MiR 703 Positive Photoresist is a medium resolution i-line sensitive Photoresist optimized for line and contact hole pattern layers. PEB temperatures and times may be application specific. The fully cross linked features are extremely thermally stable and etch resistant, yet strip quickly and easily in most common photoresist removers (AZ 400T Stripper recommended). 04. 50 2. TDS: AZ 1500-SFD Photoresist . 0 µm resist layer thickness at 4000 rpm), AZ ® nLOF 2035 (3. Fast in all exposure wavelengths 6" Si Wafers; Soft Bake 90C between 350 and 450nm. Exposed Al is etched in Al etchant (Type A, Transene, Danvers, MA) at 50 °C until Al is removed (~2 min), followed by photoresist stripping with acetone and 2-propanol ( Figure 2F ). 70 Meister Avenue Somerville, NJ 08876 Telephone No. 5 µm AZ® 351B, AZ® 326 MIF, AZ® 726 MIF, AZ® Developer AZ® 100 Remover, TechniStrip® P1316 TechniStrip® P1331 AZ® 4500 AZ® 4533 AZ® 4562 ≈3 - 5 µm ≈ 5 - 10 µm AZ ® 920 Remover can be a good choice as well, in case of harsh treated, hard to remove resist residuals. AZ ® 12XT-20PL-15 Chemically Amplified Positive Tone Photoresists . HARD BAKE AZ ® P4903 Positive Thick Resist - AZ ® P4110, AZ ® P4330, AZ ® P4903, AZ ® P4620. 0 – 5. Coated film thickness range is 1. MSDS: Safety Data Sheet AZ ® 1505 Photoresist english Sicherheitsdatenblatt AZ ® 1505 Fotolack german. 5 µm ≈ 1. Developer bulletins with additional processing details are available. : GHSBBG70J7 Version 4. The limited penetra- AZ 3312-F, AZ 3330-F: High speed version of AZ® 3300 series: 0. AZ photoresist process conditions: Pre-bake at 100 °C for 60 seconds (DHP) Exposure: 1 line step exposure machine/contact AZ 3312 Photoresist (18cps) Data Package. AZ photoresist features: Suitable for high resolution (lift-off) processes. 5 - 2. 765um on AZ BARLi II Coating. APOL-LO 3202, APOL-LO 3204, APOL-LO 3207. AZ 40XT photoresist is compatible with industry standard 0. AZ ® 4533 (3. MSDS: Safety Data Sheet AZ ® 5214E Photoresist english Sicherheitsdatenblatt AZ ® 5214E Fotolack AZ P4330-RS PHOTORESIST Substance No. Precautionary statements : Prevention : on aluminum and can also be used with AZ P4000 photoresist. 0 Product number: 212871 Revision Date: 17. Images taken from the AZ 40XT-11D Thermal Flow data sheet of AZ-EM. 03. 3 Other hazards None known. 2. 2 %ÀÈÌÒ 1 0 obj /Title (AZ 4330 Photoresist. Features. Low exposure dose requirements provide excellent throughput. AZ Non-crosslinked positive resist structures start roundening above their softening tempera-ture of typically 110°C (holds for e. 7 µm). AZ(R) 1512 PHOTORESIST Substance key: BBG7065 REVISION DATE: 06. Precautionary statements : Prevention : Photoresist AZ SLD 2530 AZ 1500 AZ SLD 5530 AZ GXR 601 AZ GXR 601M1 AZ P4000 AZ 12XT AZ nLOF 2000 AZ LOR-28 AZ 5200 AZ 15nXT Product Mode Platform sensitivity Ft range (µm) Max. Reliable performance in dry etch, wet etch, plating, and implant process environments. Below are three possible photoresist adhesion processes listed with the most successful method first. AZ P4620 Photoresist Manufacturer AZ Electronic Materials Of Clariant Corp Product code Revision date 2014 February 04 Language Chinese (Simplified) The information contained herein is, as far as we are aware, true and accurate. 2 µm) and AZ ® ECI 3027 (2. However, no representations or warranties, either express or implied, whether of merchantable quality, fitness for any particular AZ 5214E-IR Process Process Name: Positive and Image Reversal Photoresist Recipe using AZ 5214E-IR photoresist Author: A. AZ® 435MIF Developer AZ 435MIF is a unique high normality TMAH developer that may be used with thick DNQ type resists in applications where metal ions (K or Na) are undesirable. pdffactory. The lateral resolution depends on the resist film thickness and reaches down to sub-μm. Items in this series: AZ P4110 Photoresist (Quart) AZ P4110 Photoresist (Gallon) AZ P4210 Photoresist (Quart) AZ P4210 Photoresist (Gallon) AZ P4330 Photoresist (Quart) AZ P4330 Photoresist (Gallon) AZ P4400 Photoresist (Quart) AZ P4400 AZ® nLoF 5510 Photoresist @ 1. Bioz Stars score: 86/100, based on 1 PubMed citations. merck-performance-materials. May 1, 2012 · The exposure doses and photoresists thicknesses are listed in Table 1. 0 – 4. AZ HiR 1075 Photoresist. AZ 3312-F. AZ 4999 Photoresist is available in 5 Liter HDPE bottles. AZ 3318-D Photoresist (30cps) Dyed resist Prevents notching on substrates with high or varying reflectivity Reduced swing curve. AZ, the AZ logo, BARLi, Aquatar, nLOF, Kwik Strip, Klebosol, and Spinfil are AZ® 3330-F AZ® 3350-HS AZ® 3322HS 2D. Right: Progressive undercut with AZ® nLOF 2070 (resist film thick-ness 22 µm). Check part details, parametric & specs updated 27-APR-2024 and download pdf datasheet from datasheets. 35um design rules), i-line resists optimized for line/space and contact hole pattern layers. AZ 3300 Photoresists are medium resolution (0. Information about the different photoresists, adhesion promoters, and spin-on materials used in the IML, including recipes and spin speeds. Jul 7, 2018 · Az 3300-f Photoresist; of 34 /34. in the chemicals, paints and coatings category. In some photoresists, for example, butyl acetate ®(boiling point 127°C, e. 60NA (i-line) Single puddle develop in AZ 300MIF AZ® 5214E-IR AZ 12XT-20PL Series Photoresists are advanced chemically amplified i-line resists optimized for plating, TSV, and RIE etch applications. Available in both dyed and un-dyed versions, this series covers a coated thickness range of approximately 0. 38%) TMAH E-Beam Resist. The nLOF 2020 Photoresist works well in both surfactant and non-surfactant containing tetramethylammonium hydroxide (TMAH) developers. Hereby the upper resist edges rounden, while the contact points of resist and substrate do not move (compare image series %PDF-1. e. TDS: AZ 40XT-11D Photoresist is a thick chemically amplified resist optimized for MEMs, packaging (solder bump, etc. AZ: DX and EXP series: 248: multi Mar 7, 2023 · AZ 3330-F: medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. Great for pad layer applications: Can AZ 3312 Photoresist (18 CPS) Manufacturer AZ Electronic Material / A-Z Electronic Photoresist Material Product code GHSBBG703G, 18441823159 Revision date 2012 October 04 AZ Photoresists are compatible with most commercially available wafer processing equipment. 28µm dense lines @ 0. Nov 17, 2004 · AZ 3350-HS Photoresist (215 CPS) (US) Manufacturer AZ Electronic Materials Product code 184428 Revision date 2004 November 17 Language English. NOTE: When changing the thickness of the photoresist layer the appropriate exposure time and developing time will change as well. AZ 400K 1:4 developer recommended. 0µm and works well with both organic (MIF) and inorganic developers (AZ AZ nLOF 2020 Photoresist Substance No. AZ Developer 1:1 may be used in applications requiring zero etch rate on Aluminum substrates. Jul 23, 2012 · Click on a date/time to view the file as it appeared at that time. Resist to protect other resist structures; Bottom Resist. ( Working with AZ 3330 on glass surfaces can be difficult without proper surface treatment. Millipore az 7908 photoresist Az 7908 Photoresist, supplied by Millipore, used in various techniques. DEVELOPING AZ 12XT series photoresists are compatible with industry standard 0. The AZ ® P4000 positive resist series with its members AZ ® P4110, AZ ® P4330, AZ ® P4620 and AZ ® P4903 have two main characteristics: An improved adhesion to all common substrates for a higher stability for e. An AZ® MiR 701 resist pattern after a baking step at 130°C. 0100 0. 0250 0. AZ 400K developer concentrate can also be used for stripping when a corrosion resistant substrate is used. 5 min 43‐45 1 min AZ‐4562 6000rpm 5um 1. Gold track after patterning AZ-3330, exposure at 15 mJ/cm 2. Hereby the upper resist edges rounden, while the contact points of resist and substrate do not move (compare image series AZ 3318D PHOTORESIST (30 CPS) Substance No. 0µm AZ P4210 2. AZ® 1500, 4500, 9200, or ECI 3000 series), or, respectively, from approx. 54 NA i-line stepper, 270 mJ/cm2 Post Exposure Bake Hotplate 110°C, 60 sec AZ® 300 MIF Developer, 5 sec spray, 55 sec puddle at 21°C AZ® 7900 Photoresist ChemicalBook 为您提供AZ P4330 Photoresist的化学性质,熔点,沸点,密度,分子式,分子量,物理性质,毒性,结构式,海关编码等信息,同时您还可以浏览AZ P4330 Photoresist产品的价格,供应商,贸易商,生产企业和生产厂家,最后AZ P4330 Photoresist的中文,英文,用途 CAS cas number cas no可能也是您需要的。 The AZ ® 4500 series follows the AZ ® 1500 series in the attainable and processable resist film thickness range. 2020 The Safety Data Sheets for catalogue items are available at www. g. AZ ® 12XT for 5 - 15 µm Resist Film Thickness (i-line) The AZ ® 12XT is a chemically amplified thick positive resist with superior photospeed and aspect ratio characterized by its excellent environmental stability and suitability for plating and RIE etc applications. : 000000501935 Version 1. AZ 400K developers (AZ 400K 1:4 or AZ 400K 1:3) or AZ 421K developer. High transparency and chemical amplification provide aspect ratios and photospeed not possible with conventional DNQ type photoresists. The information contained herein is, to the best of our knowledge, true and accurate, but all recommendations are made without guarantee because the AZ® 12XT-20PL-10 Chemically Amplified Positive Tone Photoresists General Information AZ® 12XT for 5 - 15 µm Resist Film Thickness (i-line) The AZ® 12XT is a chemically amplified thick positive resist with superior photospeed and aspect ratio characterized by its excellent environmental stability and suitability for plating and RIE etc applications. der-etching. FT: 0. 3318D is dyed to reduce pattern damage caused by substrate reflectivity and to minimize CD variation over topography. 0 µm) cover a large resist layer thickness range with a high possible aspect ratio. wet etching or plating and a lower photo active compound Useful information related to microfabrication processes including lithography, chemical etching, substrate cleaning, photoresists, RIE etching, metal and dielectric thin film deposition, oxide growth, ion implantation, diffusion, photomask design, and much more! Expand all / Compress all General Information The Process of Fabricating a MOSFET Our photoresists are light-sensitive organic compounds used to form patterned coatings on surfaces, primarily for the production of integrated circuits and for panel displays. AZ P4620 PHOTORESIST Substance No. Coated thickness range of 0. In the case of hydrofl uoric AZ MiR 703 Positive Photoresist Overview. pxrndl kzek wcpl xtfgh xzobjhko mgrjcvx nqhke wykpfrm yod pscheib